论文标题
高度重复率Picsecond Linbo3 THz参数放大器和参数增益研究
A high repetition rate picosecond LiNbO3 THz parametric amplifier and the parametric gain study
论文作者
论文摘要
在这项工作中已经证明了具有Linbo3（LN）晶体的高度重复速率，即具有Linbo3（LN）晶体的Picsond Thz参数放大器（TPA）。以10 kHz的重复速率，在2 THz左右的较宽范围内获得了200 W的峰值功率，平均功率为12μW。在100 kHz的重复率下，已经获得了18 W的最大峰值功率，平均功率为10.8μW。还研究了LN晶体的参数增益，并引入了改进的Schwarz-Maier模型来解释实验结果。
A high repetition rate, picosecond THz parametric amplifier (TPA) with a LiNbO3 (LN) crystal has been demonstrated in this work. At 10 kHz repetition rate, a peak power of 200 W and an average power of 12 μW have been obtained over a wide range around 2 THz; at 100 kHz repetition rate, a maximum peak power of 18 W and average power of 10.8 μW have been obtained. The parametric gain of the LN crystal was also investigated and a modified Schwarz-Maier model was introduced to interpret the experimental results.
