论文标题
通过电子辐照到Delafossite金属的受控引入缺陷
Controlled introduction of defects to delafossite metals by electron irradiation
论文作者
论文摘要
delafossite金属pdcoo $ _ {2} $,ptcoo $ _ {2} $和pdcro $ _ {2} $是已知的最高电导率材料之一,具有低温平均自由路径的最佳元素生长单晶的自由途径。一个关键的问题是,由于电子结构的特殊特征,这些非常低的电阻散射速率是由于强烈抑制的反向散射而导致的,还是是高度不寻常的晶体完美水平的结果。我们报告了实验的结果,其中使用高能电子照射将点障碍引入了发生传导的PD和PT层。我们获得了以绝对单位形成Frenkel对形成的横截面,并通过对相关原子位移能的第一原理计算进行跨检查分析。我们观察到电阻率的增加,该电阻率在缺陷密度上是线性的,并且斜率与单一极限处的散射一致。我们的结果使我们能够推断出生长的晶体包含的平面内缺陷约为$ 0.001 \%$。这证实了结晶完美是实现长均值自由路径的最重要因素,并强调了与绝大多数其他多组分氧化物和合金相比,这些delafossite金属与众不同。我们讨论了我们发现对未来材料研究的含义。
The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the highest conductivity materials known, with low temperature mean free paths of tens of microns in the best as-grown single crystals. A key question is whether these very low resistive scattering rates result from strongly suppressed backscattering due to special features of the electronic structure, or are a consequence of highly unusual levels of crystalline perfection. We report the results of experiments in which high energy electron irradiation was used to introduce point disorder to the Pd and Pt layers in which the conduction occurs. We obtain the cross-section for formation of Frenkel pairs in absolute units, and cross-check our analysis with first principles calculations of the relevant atomic displacement energies. We observe an increase of resistivity that is linear in defect density with a slope consistent with scattering in the unitary limit. Our results enable us to deduce that the as-grown crystals contain extremely low levels of in-plane defects of approximately $0.001\%$. This confirms that crystalline perfection is the most important factor in realizing the long mean free paths, and highlights how unusual these delafossite metals are in comparison with the vast majority of other multi-component oxides and alloys. We discuss the implications of our findings for future materials research.