论文标题
bi $ _ {2} $ sr $ _ {2} $ CACU $ _ {2} $ o $ $ $ _ {8+x} $
Atomic manipulation of the gap in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$
论文作者
论文摘要
掺杂相关的电子系统中的单个原子操纵将非常有益于解散掺杂剂,结构缺陷和晶体学特征对局部电子状态的影响。不幸的是,它们的高扩散屏障可以阻止传统的操纵技术。在这里,我们证明了在最佳掺杂的高温超导体BI $ $ _ {2} $ sr $ _ {2} $ cacu $ _ {2} $ o $ $ $ _ {8+x} $的可能性中,可以在最佳掺杂的高温超导体BI $ _ {2} $ sr $ _ {2} $ _ {8+x} $的情况下,可以在最佳掺杂的高温高温超导体BI $ _ {2} $ sr $ _ {2} $ _ {8+x} $中使用当地电场。我们表明,在表面上移动单个BI原子后,与超导性相关的光谱间隙可逆地变化多达15 meV(占总间隙大小的约5%)。我们捕获所有观察到的特征的玩具模型表明该场引起了点状物体的横向运动,该物体在CUO2平面中产生局部配对电位。
Single atom manipulation within doped correlated electron systems would be highly beneficial to disentangle the influence of dopants, structural defects and crystallographic characteristics on their local electronic states. Unfortunately, their high diffusion barrier prevents conventional manipulation techniques. Here, we demonstrate the possibility to reversibly manipulate select sites in the optimally doped high temperature superconductor Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ using the local electric field of the tip. We show that upon shifting individual Bi atoms at the surface, the spectral gap associated with superconductivity is seen to reversibly change by as much as 15 meV (~5% of the total gap size). Our toy model that captures all observed characteristics suggests the field induces lateral movement of point-like objects that create a local pairing potential in the CuO2 plane.