论文标题
在有限尺寸的量子旋转大厅系统中，偏置电压诱导的拓扑相变
Bias-Voltage-Induced Topological Phase Transition in Finite Size Quantum Spin Hall Systems in the Presence of a Transverse Electric Field
论文作者
论文摘要
在不存在和存在外部横向电场的情况下，研究了使用紧密结合的BHz模型和Landauer-Büttiker形式主义，是HGTE/CDTE量子量井的有限宽度的拓扑不变性。可以认识到，临界电流会改变量子丝带的拓扑不变。通过调节偏置电压发生的这种拓扑相变，取决于样品的宽度和栅极电压。外部横向电场的深刻影响被认为是分离旋转和旋转带结构，减少带隙并调整普通和量子旋转霍尔方案之间的拓扑相变。这些声明横向电场放大了量子自旋霍尔机制，并导致量子丝带中诱导拓扑相变。我们的发现可能立即在Spintronic领域清除研究的一些实际方面，以在基于自旋的设备中就业。
Using the tight-binding BHZ model and Landauer-Büttiker formalism, the topological invariant of the finite width of ribbons of HgTe/CdTe quantum well is studied in the absence and presence of an external transverse electric field. It will be recognized that a critical current changes topological invariant of ribbons of quantum well. This topological phase transition, which occurred by adjustment of the bias voltage, depends on the width of the sample and the gate voltage. The profound effects of an external transverse electric field are considered to the separation of spin-up and spin-down band structures, decreasing band gap and tuning the topological phase transition between ordinary and quantum spin Hall regime. These declares the transverse electric field amplifies the quantum spin Hall regime and causes inducing the topological phase transition in ribbons of quantum well. Our finding may instantly clear some practical aspects of the study in the field of spintronic for employment in spin-based devices.
