论文标题
纵向自旋松弛模型应用于点缺陷量子系统
Longitudinal spin relaxation model applied to point defect qubit systems
论文作者
论文摘要
由于其广泛的纳米级传感和量子技术应用，因此，半导体中可控的，部分隔离的几个级别系统最近引起了多学科的关注。对此类系统的动态和相关应用的定量模拟是一项具有挑战性的理论任务，不仅需要忠实的描述，不仅需要少数级别的系统，还需要其本地环境。在这里，我们开发了一种可以描述由核和电子自旋稀释浴引起的相关放松过程的方法。该方法在中央自旋系统的群集近似框架中使用了扩展的lindblad方程。我们证明，所提出的方法可以准确地描述示例性固态缺陷量子量子系统的T $ _1 $时间，尤其是Diamond的NV中心，在各种磁场和应变中。
Controllable, partially isolated few level systems in semiconductors have recently gained multidisciplinary attention due to their widespread nanoscale sensing and quantum technology applications. Quantitative simulation of the dynamics and related applications of such systems is a challenging theoretical task that requires faithful description not only the few level systems but also their local environments. Here, we develop a method that can describe relevant relaxation processes induced by a dilute bath of nuclear and electron spins. The method utilizes an extended Lindblad equation in the framework of cluster approximation of a central spin system. We demonstrate that the proposed method can accurately describe T$_1$ time of an exemplary solid-state point defect qubit system, in particular NV center in diamond, at various magnetic fields and strain.
