论文标题
氧化物电子产品中旧材料的新型低质量：用于电阻随机访问记忆应用的金属氧化物
Novel hypostasis of old materials in oxide electronics: metal oxides for resistive random access memory applications
论文作者
论文摘要
最近已提出了阈值和非挥发性记忆电阻切换的影响的过渡金属氧化物膜，作为存储级记忆的候选材料。在这项工作中，我们描述了许多各种过渡金属中阈值切换的一些实验结果（V，Ti，Fe，Nb，Nb，Mo，W，Hf，Hf，Zr，Mn，Mn，Mn，Mn，Mn，Mn，Mn，Y和TA）氧化物膜通过阳极氧化获得。然后，提出了诸如V2O5，NB2O5和NIO之类的氧化物基于MOS结构中可动力转换的影响的结果。结果表明，基于AU/V2O5/SIO2/SI，NB/NB2O5/AU和PT/NIO/PT的三明治结构可以用作RERAM应用程序的存储元素。最后，开发模型近似值是为了从理论上描述PT Nio-PT结构中非易失性单极切换的效果。
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental results on threshold switching in a number of various transition metal (V, Ti, Fe, Nb, Mo, W, Hf, Zr, Mn, Y, and Ta) oxide films obtained by anodic oxidation. Then, the results concerning the effects of bistable resistive switching in MOM and MOS structures on the basis of such oxides as V2O5, Nb2O5, and NiO are presented. It is shown that sandwich structures on the basis of the Au/V2O5/SiO2/Si, Nb/Nb2O5/Au, and Pt/NiO/Pt can be used as memory elements for ReRAM applications. Finally, model approximations are developed in order to describe theoretically the effect of nonvolatile unipolar switching in Pt NiO-Pt structures.
