论文标题
在掺杂的半导体薄膜中超快的两光子发射
Ultrafast two-photon emission in a doped semiconductor thin film
论文作者
论文摘要
作为高阶量子过渡，与单光子发射相比，两光子发射的发生率极低，因此被认为是禁止的过程。在这里，我们提出了一种允许超快速两光子的方案，利用了高掺杂的，发光的半导体薄膜中高度狭窄的表面等离子体极化模式。表面等离子体极化模式量身定制为与半导体中的两光子发射具有同时的光谱和空间重叠。使用掺杂的INSB作为原型材料，我们表明可以通过10个数量级来加速两光子的发射：从数十毫秒到picseconds，超过了单光子发射率。我们的结果为超快单和纠缠的光子生成提供了一个半导体平台，并在中红外具有可调的发射波长。
As a high-order quantum transition, two-photon emission has an extremely low occurrence rate compared to one-photon emission, thus having been considered a forbidden process. Here, we propose a scheme that allows ultrafast two-photon emission, leveraging highly confined surface plasmon polariton modes in a degenerately-doped, light-emitting semiconductor thin film. The surface plasmon polariton modes are tailored to have simultaneous spectral and spatial overlap with the two-photon emission in the semiconductor. Using degenerately-doped InSb as the prototype material, we show that the two-photon emission can be accelerated by 10 orders of magnitude: from tens of milliseconds to picoseconds, surpassing the one-photon emission rate. Our result provides a semiconductor platform for ultrafast single and entangled photon generation, with a tunable emission wavelength in the mid-infrared.
