论文标题
各向异性电子 - photon-Phonon耦合在分层MOS2中
Anisotropic Electron-Photon-Phonon Coupling in Layered MoS2
论文作者
论文摘要
由于其可调可见的范围带隙以及各向异性电子和传输特性，过渡金属二甲基化元素（尤其是MOS2）最近引起了很多关注。在这里，我们报告了在CVD（水平和垂直排列的薄片）以及MOS2的单晶片上进行的全面无弹性散射测量，通过研究Raman活性phoneon模式的极化依赖性强度，探测各向异性光学响应，作为不同入射光子能量和薄片厚度的功能。我们的极化依赖性拉曼研究很有趣地揭示了模式强度的异常重态化反映的强烈各向异性行为，这是片状厚度，声子和光子能量的函数。我们的观察结果反映了这种高晶体对称分层MOS2系统中强烈的各向异性光 - 物质相互作用，尤其是对于平面振动，这对于理解这些材料的应用至关重要，例如光电应用。
Transition metal dichalcogenide, especially MoS2 has attracted lot of attention recently owing to its tunable visible range band gap and anisotropic electronic and transport properties. Here, we report a comprehensive inelastic light scattering measurements on CVD grown (horizontally and vertically aligned flakes) as well as single crystal flakes of MoS2, probing the anisotropic optical response via studying the polarization dependence intensity of the Raman active phonon modes as a function of different incident photon energy and flake thickness. Our polarization dependent Raman studies intriguingly revealed strong anisotropic behavior reflected in the anomalous renormalization of the modes intensity as a function of flake thickness, phonons and photon energy. Our observations reflects the strong anisotropic light-matter interaction in this high crystalline symmetric layered MoS2 system especially for the in-plane vibrations, which is crucial for understanding as well application of these materials for future application such as optoelectronic applications.
