论文标题
低温光发射电子显微镜在铁电域壁上的静电势映射
Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy
论文作者
论文摘要
低温X射线光发射电子显微镜(X-PEEM)用于测量不正确的铁电ER0.99CA0.01MNO3的域壁的电势。通过将X-eem与扫描探针显微镜和理论相结合,我们开发了一个模型,该模型将检测到的X-eem对比与未补偿的结合电荷的出现相关联,从而解释了基于内在的电子域壁性能的图像形成。与先前应用的低温静电力显微镜(EFM)相反,X-Peem很容易区分域壁上的正和负电荷。我们的研究介绍了一种基于X-eem的方法,用于低温静电势映射,促进纳米级的空间分辨率和数据采集时间为0.1-1秒。
Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Our study introduces an X-PEEM based approach for low-temperature electrostatic potential mapping, facilitating nanoscale spatial resolution and data acquisition times in the order of 0.1-1 sec.