论文标题
晶体纯度与1 $ t $ -VSE $ _2 $的电荷密度波之间的相关性
Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2$
论文作者
论文摘要
我们检查了1 $ t $ -VSE $ _ {2} $晶体在不同条件下通过化学蒸气运输（CVT）生长的晶体的电荷密度波（CDW）属性。具体来说，我们发现，通过降低生长温度（$ t _ {\ mathrm {g}} $ $ <$ 630 $^{\ circ} $ c），CDW过渡温度和从电气传输测量测量中获得的残留电阻比（RRR）都有显着提高。使用X射线光电子光谱（XPS），我们将观察到的CDW特性与化学计量和缺陷的性质相关联。此外，我们还优化了一种生长超高纯度的方法1 $ t $ -vse $ _ {2} $晶体，具有CDW过渡温度，$ t _ {\ mathrm {cdw}} $ =（112.7 $ \ $ 0.8）k，最大残留电阻比（rrr）$ \ $ \ $ \ $ 49，这是最高的剩余电阻比（RRR）。这项工作强调了CDW在1 $ t $ -VSE $ _ {2} $中对缺陷和整体化学计量的敏感性，以及控制强相关的过渡金属二十钙化的晶体生长条件的重要性。
We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy (XPS), we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultra-high purity 1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ = (112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the importance of controlling the crystal growth conditions of strongly-correlated transition metal dichalcogenides.
