论文标题
Basn3超导体中的De Hass-Van Alphen量子振荡，带有多个Dirac Fermions
The de Hass-van Alphen quantum oscillations in BaSn3 superconductor with multiple Dirac fermions
论文作者
论文摘要
通过测量de hass-van alphen效应并计算电子带结构，我们研究了Basn3超导体的大量费米表面，其过渡温度为〜4.4 K.醒目的de haas-van alphen（DHVA）量子次振荡，当磁场b时磁场b是pernecent b perpendiculin tlanceltic the perpendicular to perpendicular至1001）和（100）（100）。当B垂直于（100）时，我们的分析揭示了在量子振荡中施加的非平凡浆果相，两个基本频率在31.5 t和306.7 t时，可能是由形成类型-II Dirac点的两个相应孔口袋引起的。结果得到了从头算计算的支持，表明II型dirac点设置和沿布里渊区的高对称K-H线倾斜，比费米水平高出约0.13 eV。此外，计算还揭示了高对称γ-A方向上的另外两个I型Dirac点，但略高于费米水平。结果证明了BASN3是研究单个材料中不同类型的狄拉克费米斯的外来特性的绝佳平台，还可以研究非平凡拓扑状态和超导性之间的相互作用。
By measuring the de Hass-van Alphen effect and calculating the electronic band structure, we have investigated the bulk Fermi surface of the BaSn3 superconductor with a transition temperature of ~ 4.4 K. Striking de Haas-van Alphen (dHvA) quantum oscillations are observed when the magnetic field B is perpendicular to both (100) and (001) planes. Our analysis unveiled nontrivial Berry phase imposed in the quantum oscillations when B is perpendicular to (100), with two fundamental frequencies at 31.5 T and 306.7 T, which likely arise from two corresponding hole pockets of the bands forming a type-II Dirac point. The results are supported by the ab initio calculations indicating a type-II Dirac point setting and tilting along the high symmetric K-H line of the Brillouin zone, about 0.13 eV above the Fermi level. Moreover, the calculations also revealed other two type-I Dirac points on the high symmetric Γ-A direction, but slightly far below the Fermi level. The results demonstrate BaSn3 as an excellent platform for the study of not only exotic properties of different types of Dirac fermions in a single material, but also the interplay between nontrivial topological states and superconductivity.
