论文标题
去角质的六角形BN作为栅极介电，用于纳米级量子点，具有改善的门滞后和电荷噪声
Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise
论文作者
论文摘要
我们表征了通过蒸气 - 液体固定过程生长的纳米线中底部指门引起的INSB量子点。门被剥落的35 \，nm薄六角形BN薄片从纳米线分离。我们探究了栅极诱导的量子点的库仑钻石，表现出$ \ sim 2.5 \，\ mathrm {Mev} $和轨道激发能量的充电能量，最高为$ 0.3 \，\ MATHRM {MEV} $。覆盖5颗库仑钻石的扫描的闸门磁滞显示出一种能量滞后在向上和向下扫荡之间的$ 60 \ mathrm {μev} $。通过长期测量在库仑峰的斜率上研究了电荷噪声，揭示了$ \ sim 1 \，μ\ Mathrm {ev}/\ mathrm {\ sqrt {hz}} $ 1 \ hz，Hz的潜在波动。这使得H-BN成为当前最低栅极滞后的介电和低差异III-V纳米线报道的最低低频电位波动。提取的值类似于Si/Sige和Si/Sio $ {_ 2} $ Systems中的最新量子点。
We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.
