论文标题
由于SNSE中压力诱导的LIFSHITZ过渡,热电效率的大大提高
Large Enhancement of Thermoelectric Efficiency Due to a Pressure-Induced Lifshitz Transition in SnSe
论文作者
论文摘要
费米表面拓扑的变化Lifshitz过渡可能会极大地影响固体中的外来相关现象,例如高温超导性和复杂的磁性。但是,由于在密切相关的系统中通常很难观察费米表面,因此到目前为止,Lifshitz过渡与量子现象之间的直接联系一直难以捉摸。在这里,我们报告了压力诱导的LIFSHITTER对SNSE热电性能的显着影响,SNSE是一种有希望的热电材料,而没有强电子相关性。通过施加高达1.6 GPA的压力,我们观察到,在宽温度范围内,热电功率因数的增强大量超过100%(10-300 K)。此外,高载体迁移率可以检测电阻率的量子振荡,从而揭示了新的费米口袋的出现在〜0.86 GPA。与多谷带结构相关的观察到的热电特性是通过第一原理计算来定量复制的,从而为设计与SNSE相关的材料以及潜在的valleytronic和热电应用提供了新的见解。
Lifshitz transition, a change in Fermi surface topology, is likely to greatly influence exotic correlated phenomena in solids, such as high-temperature superconductivity and complex magnetism. However, since the observation of Fermi surfaces is generally difficult in the strongly correlated systems, a direct link between the Lifshitz transition and quantum phenomena has been elusive so far. Here, we report a marked impact of the pressure-induced Lifshitz transition on thermoelectric performance for SnSe, a promising thermoelectric material without strong electron correlation. By applying pressure up to 1.6 GPa, we have observed a large enhancement of thermoelectric power factor by more than 100% over a wide temperature range (10-300 K). Furthermore, the high carrier mobility enables the detection of quantum oscillations of resistivity, revealing the emergence of new Fermi pockets at ~0.86 GPa. The observed thermoelectric properties linked to the multi-valley band structure are quantitatively reproduced by first-principles calculations, providing novel insight into designing the SnSe-related materials for potential valleytronic as well as thermoelectric applications.