论文标题
在二维电子系统边缘相关的双电子添加
Correlated double-electron additions at the edge of a two-dimensional electronic system
论文作者
论文摘要
我们创建了侧向大小的量子量量量子点,以研究二维电子系统(2DE)的单电子添加。电子隧道从单个$ n+$电极从藻类隧道屏障穿过这些点。使用稀释冰箱中的单电子电容光谱,我们确定了将第一个电子添加到DOT中的电容峰,并记录在添加光谱中,直到成千上万个电子的占用率。在这里,我们报告了在填充因子范围内发生的两个显着现象$ν= 2 $至$ν= 5 $,而在点的边缘状态下有选择地探测电子添加:(1)库仑封锁峰来自两个电子的入口,而不是一个; (2)在5/2和固定的门电压上,这些双高峰均匀地显示为$ h/2e $。在其他填充因子范围内的$ν= 2 $至$ν= 5 $的范围内,两次高度电子峰的平均周期性仍然是$ h/2e $,但是两次高峰又被进一步束成双双高峰会,将成对分布$ h/e $。不寻常的两电子库仑封锁峰表明了一种新型的隧道效应,涉及量子点中出现的电子相关性,光谱为$ν= 5/2 $,与以前仅在超导点中看到的相同。
We create laterally large and low disorder quantum well based quantum dots to study single electron additions to two dimensional electron systems (2DES). Electrons tunnel into these dots across an AlGaAs tunnel barrier from a single $n+$ electrode. Using single-electron capacitance spectroscopy in a dilution refrigerator, we identify capacitance peaks for the addition of the first electron to a dot and record subsequent peaks in the addition spectrum up to occupancies of thousands of electrons. Here, we report two remarkable phenomena that occur in the filling factor range $ν=2$ to $ν=5$ while selectively probing electron additions to the edge states of the dot: (1) Coulomb blockade peaks arise from the entrance of two electrons rather than one; (2) at and near filling factor 5/2 and at fixed gate voltage, these double-height peaks appear uniformly with a periodicity of $h/2e$. At other filling factors in the range $ν=2$ to $ν=5$, the mean periodicity for the twice-height electron peaks remains $h/2e$, but the twice-height peaks are instead further bunched into pairs of double-height peaks, with pairs spaced $h/e$ apart. The unusual two-electron Coulomb blockade peaks suggest a novel pair tunneling effect that involves electron correlations that arise in the quantum dot, with spectra at $ν=5/2$ identical to those previously only seen in superconducting dots.