论文标题
\ b {eta} -ga2o3单晶通过HF掺杂中的掺杂掺杂
Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping
论文作者
论文摘要
n类型的电导率\ b {eta} -ga2O3从熔体生长的n型电导率通常使用Sn和Si实现。在本文中，我们使用UV-VIS-NIR吸收和HALL效应测量结果以及混合功能计算，在实验和计算上研究\ B {eta} -GA2O3单晶的HF掺杂。在混合AR+O2大气中，使用垂直梯度冻结（VGF）（VGF）和Czochralski方法从熔体中种植了浓度为0.5AT％的无意识和HF掺杂样品。我们演示了HF掺杂剂，预计将在八面体gaii位置作为浅供体纳入\ b {eta} -GA2O3，并具有测量的电子浓度为2 x 10^19 cm^-3，Mobibility 80-65 cm^2 /vs，并在我们的Sampemples中添加了80-65 cm^2 /vs，并在我们的Sampemples中获得了80-65 cm^2 /vs的电阻。使用Glow放电质谱（GDM）在掺杂样品上测量HF的浓度为1.3 x 10^19原子/cm^3，证实HF是N型电导率的原因（电子浓度〜2 x 10^10^19 cm-3）。
N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze (VGF) and Czochralski method in mixed Ar+O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in \b{eta}-Ga2O3 with a measured electron concentration 2 x 10^19 cm^-3 , mobility 80-65 cm^2 /Vs, and resistivity down to 5 mOhm-cm in our samples. The concentration of Hf was measured to be 1.3 x 10^19 atoms/cm^3 using glow discharge mass spectroscopy (GDMS) on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 x 10^19 cm-3).
