论文标题
层间相互作用引起的节点线半准Zrsite中LIFSHITZ过渡的适应症
Indications for Lifshitz transitions in the nodal-line semimetal ZrSiTe induced by interlayer interaction
论文作者
论文摘要
当前，分层材料的Zrsite被广泛研究为节点线的半学，其类似狄拉克的带状交叉横梁受到了靠近费米能的非晶状体对称性的保护。在外部压力下，最近对ZRSITE的红外光谱研究发现了光学响应中的异常情况，为压力诱导的相变的提示为$ \ $ \ $ \ $ \ $ 4.1，$ \ $ \ $ \ $ 6.5 gpa。通过压力依赖性的拉曼光谱和X射线衍射测量，结合了电子带结构计算，我们发现在没有晶格对称性变化的情况下，Fermi表面拓扑的两个压力诱导的Lifshitz跃迁的指示。这些电子相变可以归因于外部压力引起的增强层间相互作用。我们的发现证明了层间距离对分层范德华拓扑材料的电子特性的关键作用。
The layered material ZrSiTe is currently extensively investigated as a nodal-line semimetal with Dirac-like band crossings protected by nonsymmorphic symmetry close to the Fermi energy. A recent infrared spectroscopy study on ZrSiTe under external pressure found anomalies in the optical response, providing hints for pressure-induced phase transitions at $\approx$4.1 and $\approx$6.5 GPa. By pressure-dependent Raman spectroscopy and x-ray diffraction measurements combined with electronic band structure calculations we find indications for two pressure-induced Lifshitz transitions with major changes in the Fermi surface topology in the absence of lattice symmetry changes. These electronic phase transitions can be attributed to the enhanced interlayer interaction induced by external pressure. Our findings demonstrate the crucial role of the interlayer distance for the electronic properties of layered van der Waals topological materials.
