论文标题
GAPSB/SI串联材料关联性特性评估光电化学细胞
Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells
论文作者
论文摘要
在这里，根据其用于太阳能水分拆分应用的使用，确定了GAP1-XSBX/SI Tandem材料关联的结构，电子和光学特性。 GAPSB结晶层通过具有不同SB含量的分子束外延生长在Si上。通过将实验吸收测量与紧密结合（TB）理论计算相结合，在整个SB范围内确定带隙值和带隙类型的GAPSB合金。发现直接（γ波段）交叉的间接（X波段）以30％的SB含量发生。特别是，在SB含量为32％的情况下，GAP1-XSBX合金达到了所需的1.7EV直接带隙，从而使有效的阳光吸收能够与SI 1.1 EV频段合并。此外，已经分析了GAP1-XSBX合金和SI的带对齐，已经分析了氧化还原电位水平，这表明GAPSB/SI关联是氢进化和氧气演化反应的有趣组合。这些结果为开发III-V/SI低成本高效光电化学细胞开发了新的途径。
Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption measurements with tight binding (TB) theoretical calculations. The indirect (X-band) to direct (Γ-band) cross-over is found to occur at 30% Sb content. Especially, at a Sb content of 32%, the GaP1-xSbx alloy reaches the desired 1.7eV direct bandgap, enabling efficient sunlight absorption, that can be ideally combined with the Si 1.1 eV bandgap. Moreover, the band alignment of GaP1-xSbx alloys and Si with respect to water redox potential levels has been analyzed, which shows the GaPSb/Si association is an interesting combination both for the hydrogen evolution and oxygen evolution reactions. These results open new routes for the development of III-V/Si low-cost high-efficiency photoelectrochemical cells.
