论文标题
GAN/Algan Fet中的量子点的形成
Formation of quantum dots in GaN/AlGaN FETs
论文作者
论文摘要
GAN和异质结构在凝结的物质科学以及电子设备的应用中具有吸引力。我们在低温温度下测量GAN/Algan场效应晶体管（FET）中的电子传输。我们观察到在二维电子气体（2DEG）耗竭附近的传导通道中量子点的形成。在FET传导通道中杂质引起的无序电位中形成了多个量子点。我们还测量了传输特性的栅极绝缘子依赖性。这些结果可用于利用GAN/Algan异质结构的量子点设备的开发以及GAN/Algan Fet通道中杂质的评估。
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels.
