论文标题
与单层中的单个钒原子相关的界孔状态
Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe$_2$
论文作者
论文摘要
用磁原子掺杂二维半导体是诱导材料中磁性的途径。我们通过扫描透射电子显微镜和扫描隧道显微镜和光谱扫描，对单层WSE $ _2 $的原子结构和电子特性进行了报道。大多数V原子都在W站点合并。这些v $ _W $掺杂剂的充电负荷，该局部界限最大值高于Valence Band的局部界面状态。两个充电v $ _W $掺杂者的电子潜力的重叠会产生额外的内置状态。最终，负电荷可能会抑制V $ _W $掺杂剂的磁矩。
Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V$_W$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V$_W$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V$_W$ dopants.
