论文标题
28nm完全消耗的SOI技术：用于量子计算的低温控制电子设备
28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
论文作者
论文摘要
本文报告了28nm完全消耗的SOI CMOS技术的首次低温表征。提出了一项关于数字/模拟性能和从房间到液体氦气温度的身体偏见的全面研究。尽管运作低温，但身体偏见的有效性保持不变，并提供了出色的$ v_ {th} $可控性。低温操作可实现更高的驱动电流，并大大减少了子阈值秋千（降至7MV/dec）。 FDSOI可以为低温低功率电子产品提供宝贵的方法。设想了诸如量子处理器的经典控制硬件之类的应用程序。
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.
