论文标题
原子薄的MOS2中可扩展的单光子源
Scalable single-photon sources in atomically thin MoS2
论文作者
论文摘要
现实世界量子应用程序,例如。芯片量子网络和量子密码学需要与现代信息技术的纳米级足迹进行大规模集成的单光子源。尽管传统3D材料中原子量表单光子源的按需和高保真植入由于晶体维度而遭受了不确定性,但分层的2D材料可以托管点状的中心,并固有地限制对亚NM平面。但是,以前的尝试在维持2D角色的同时真正确定性地控制空间位置和光谱同质性的尝试尚未实现。在这里,我们证明了单光子源在原子薄的MOS2中的按需创造和精确定位,并具有非常狭窄的合奏扩大和近乎统一的制造产量。聚焦的离子束照射可产生100至1000秒的单型原子缺陷,具有抗堆积的发射线,均低于10 nm的横向和0.7 nm的轴向定位精度。我们的结果牢固地建立了2D材料,作为具有前所未有的位置控制和光物理特性的单光子发射器的可扩展平台。
Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.