论文标题
来自实验和理论的单层和双层WSE $ _2 $的激子G因子
Exciton g-factors in monolayer and bilayer WSe$_2$ from experiment and theory
论文作者
论文摘要
单层和双层过渡金属二进制二色质半导体的光学性质受不同自旋和山谷构型的激子支配，为Van der Waals异质结构和设备提供了多功能方面。我们介绍了中性和带电的WSE $ _2 $单层和嵌入在现场效应设备中的双层晶体中的外部磁场中的激子能量分裂的实验和理论研究，以进行主动掺杂控制。我们开发了理论方法来计算第一原理中的激子$ g $ factor，并为单层中的所有可能的旋转谷物配置和紧密结合来计算单层和biLayer wse $ _2 $的所有可能的旋转谷物配置。我们的理论和实验发现揭示了单层和双层WSE $ _2 $的一些特征性光致发光峰。从更一般的角度来看，我们作品的理论方面为在存在外部磁场的情况下的单层和几层过渡金属二核苷及其异质结构的表征提供了新的指南。
The optical properties of monolayer and bilayer transition metal dichalcogenide semiconductors are governed by excitons in different spin and valley configurations, providing versatile aspects for van der Waals heterostructures and devices. We present experimental and theoretical studies of exciton energy splittings in external magnetic field in neutral and charged WSe$_2$ monolayer and bilayer crystals embedded in a field effect device for active doping control. We develop theoretical methods to calculate the exciton $g$-factors from first principles and tight-binding for all possible spin-valley configurations of excitons in monolayer and bilayer WSe$_2$ including valley-indirect exciton configurations. Our theoretical and experimental findings shed light on some of the characteristic photoluminescence peaks observed for monolayer and bilayer WSe$_2$. In more general terms, the theoretical aspects of our work provide new guidelines for the characterization of single and few-layer transition metal dichalcogenides, as well as their heterostructures, in the presence of external magnetic fields.
