论文标题
CMOS量子点阵列中的电荷检测
Charge detection in an array of CMOS quantum dots
论文作者
论文摘要
半导体纳米结构中量子点阵列的最新发展突出了量子设备向大规模的进步。但是，如何在诸如硅等可扩展平台上实现此类阵列仍然是一个悬而未决的问题。主要挑战之一是在阵列内检测指控。通过旋转转换机制初始化所需的电荷状态并读取旋转是一种先决条件。在本文中，我们使用两种基于单铅电荷检测器或可重编程的单电子晶体管的方法。借助这些方法，我们通过执行电荷的单射击检测来研究电荷动力学和灵敏度。最后，我们可以在线性阵列的任何节点上探测电荷稳定性，并评估结构中的库仑疾病。我们发现电荷噪声与其他硅量子点报道的电荷噪声引起的电势波动。
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.
