论文标题
通过金插入获得的SIC上的绝无用的单层石墨烯中的双极电荷转运
Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation
论文作者
论文摘要
我们介绍了一项研究，该研究是通过在碳缓冲层（BU-L）和4H-Silicon Carbide的碳缓冲层（BU-L）和硅端的面部（BU-L）和硅末端的面部（BU-L）之间的界面上插入的研究。通过在BU-L上沉积原子薄的Au，然后在氩气气氛中在850°C退火来实现AU插入。我们通过表面科学表征和顶部门控电子设备中的电子传输探索了AU和BU-L将BU-L耦合到绝无成本的单层石墨烯中的插入。根据栅极依赖性磁转运，我们发现AU间缩放的缓冲层显示单层石墨烯的所有特性，即横跨DIRAC点的栅极可调双极传输，以及根据AU含量的N-或P型掺杂。
We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 °C in an Argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterizations and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate tunable ambipolar transport across the Dirac point, and n- or p-type doping depending on the Au content.
