论文标题
使用扫描隧道显微镜在拓扑绝缘体中表面自旋偏振电子积累的实验检测
Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy
论文作者
论文摘要
在拓扑绝缘子（TI）的表面模式下，自旋摩托孔锁定导致由偏置电流流过Ti样品引起的自旋极电子的表面积累。在这里，我们证明扫描隧道显微镜可用于感知这种表面自旋偏振电子的积累。我们通过采用Fe涂层的W技巧以及非磁性W技巧，介绍了SN-Doped BI $ _2 $ _3 $样品的实验结果。我们观察到通过Ti样品的偏置电流的函数观察到自旋蓄能的线性增加。
Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi$_2$Se$_3$ samples by employing Fe-coated W tips as well as non-magnetic W tips. We observe a linear increase in the spin-accumulation as a function of bias current through TI samples.
