论文标题
在室温下，SNSE单层中铁电域的微观操纵
Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperature
论文作者
论文摘要
二维（2D）Van der Waals Ferroelectrics为基于垂直和共同平面杂音的2D Ferroic材料提供了前所未有的建筑自由。然而，在单层厚的2D铁电极具有平面偏振的单层厚2D铁中，对铁电域的受控微观操纵仍然很少见。在这里，我们报告了在石墨烯上生长的SNSE单层板接近400 K的稳健铁电性的发现，并通过将适当的偏置电压脉冲应用于扫描隧道显微镜（STM）来证明受控室温的室温铁电域操纵。这项研究表明，STM是2D铁电单层中检测和操纵微观结构域结构的强大工具，对于常规方法（例如Piezoresponse Force显微镜），这是难以实现的，从而促进了其他2D铁电向单层具有重要技术应用的2D铁电层。
Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene, and the demonstration of controlled room temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which is difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.
