论文标题
铁磁 - 磷酸 - 富特纳米结构的应变工程
Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures
论文作者
论文摘要
我们计算了几乎未开发的纳米结构中的自旋偏振电导率，“高温铁磁绝缘子/石墨烯/铁电膜”，特别注意电动极化旋转在应变的多轴铁电膜中的影响。极化载体的旋转和值由不合适的应变控制。我们提出了一个现象学模型，该模型考虑了由于铁磁绝缘子的接近性而导致的狄拉克点的变化，并使用陆二烯公式用于石墨烯通道的电导率。我们得出了分析表达式，这表明应变依赖性铁电化极化以自隔离的方式控制二维荷载体和费米水平的浓度。我们证明了通过房间的不合适菌株（“应变工程”）在纳米结构中使用不合适的菌株（应变工程）来控制石墨烯的自旋电导的现实机会，纳米结构中的温度较高。获得的结果为铁磁/石墨烯/铁电纳米结构作为非挥发性旋转过滤器和自旋阀的应用开辟了可能性。
We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention to the impact of electric polarization rotation in a strained multiaxial ferroelectric film. The rotation and value of polarization vector are controlled by a misfit strain. We proposed a phenomenological model, which takes into account the shift of the Dirac point due to the proximity of ferromagnetic insulator and uses the Landauer formula for the conductivity of the graphene channel. We derived analytical expressions, which show that the strain-dependent ferroelectric polarization governs the concentration of two-dimensional charge carriers and Fermi level in graphene in a self-consistent way. We demonstrate the realistic opportunity to control the spin-polarized conductance of graphene by a misfit strain ("strain engineering") at room and higher temperatures in the nanostructures CoFeO4/graphene/PZT and Y3Fe5O12/graphene/PZT. Obtained results open the possibilities for the applications of ferromagnetic/graphene/ferroelectric nanostructures as non-volatile spin filters and spin valves.
