论文标题

可调电子结构和化学计量依赖性障碍纳米结构vo $ _x $电影

Tunable electronic structure and stoichiometry dependent disorder in Nanostructured VO$_x$ films

论文作者

Delia, A., Rezvani, S. J., Zema, N., Zuccaro, F., Fanetti, M., Belec, Blaz, Li, B. W., Zou, C. W., Spezzani, C., Sacchi, M., Marcelli, A., Coreno, M.

论文摘要

我们介绍并讨论一种原始方法,以综合无序的纳米结构(NS)vo $ _x $胶片具有控制化学计量和可调电子结构。在这些NS膜中,散装氧化钒的原始晶格对称性被破碎,原子以高度无序的结构排列。化学计量依赖性疾病与氧浓度的函数的特征是原位X射线吸收近边结构(XANES)光谱鉴定光谱指纹。结果表明,结构重排与不同的共存无序相位的八面体对称性偏离。还讨论了NS膜的电子结构基于所得的化学计量和NS颗粒中的量子限制的调节。我们证明了调节VO $ $ _X $ ns膜的电子结构的可能性,这些胶片访问新的无序原子配置具有受控的化学计量计,这为匹配多种技术应用提供了极大的机会。

We present and discuss an original method to synthesize disordered Nanostructured (NS) VO$_x$ films with controlled stoichiometry and tunable electronic structures. In these NS films, the original lattice symmetry of the bulk vanadium oxides is broken and atoms are arranged in a highly disordered structure . The stoichiometry-dependent disorder as a function of the oxygen concentration has been characterized by in-situ X-ray Absorption Near-Edge Structure (XANES) spectroscopy identifying the spectroscopic fingerprints. Results show structural rearrangements that deviate from the octahedral symmetry with different coexisting disordered phases. The modulation of the electronic structure of the NS films based on the resulted stoichiometry and the quantum confinement in the NS particles are also discussed. We demonstrate the possibility to modulate the electronic structure of VO$_x$ NS films accessing new disordered atomic configurations with a controlled stoichiometry that provides an extraordinary opportunity to match a wide number of technological applications.

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