论文标题
通过电荷密度波切换带反转和拓扑表面状态
Switching of band inversion and topological surface states by charge density wave
论文作者
论文摘要
拓扑非平凡的材料通过散装对应关系与散装条带相关的寄主受保护的边缘状态。操纵这种边缘状态非常需要使用无耗散的性质和自旋摩托车锁定来开发新功能和设备。在这里,我们介绍了一个过渡金属二色元化vte $ _2 $,该$ _2 $托管电荷密度波(CDW),以及涉及v3 $ d $ d $ d $ d $ d $ p $ orbitals的频段反演。带有第一原理计算的自旋和角度分辨的光发射光谱揭示了通过CDW形成对散装电子结构进行了巨大的各向异性修饰,伴随着在正常状态下存在的Dirac型自旋旋转拓扑表面状态的选择性消失。彻底对散装状态进行的三维研究表明,布里渊区边界的相应带反转通过转化为异常的平坦带溶解在CDW形成下。我们的发现通过利用CDW的灵活特征到外部刺激来对对物质的拓扑操作提供了新的见解。
Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically using their dissipation-less nature and spin-momentum locking. Here we introduce a transition-metal dichalcogenide VTe$_2$, that hosts a charge density wave (CDW) coupled with the band inversion involving V3$d$ and Te5$p$ orbitals. Spin- and angle-resolved photoemission spectroscopy with first-principles calculations reveal the huge anisotropic modification of the bulk electronic structure by the CDW formation, accompanying the selective disappearance of Dirac-type spin-polarized topological surface states that exist in the normal state. Thorough three dimensional investigation of bulk states indicates that the corresponding band inversion at the Brillouin zone boundary dissolves upon CDW formation, by transforming into anomalous flat bands. Our finding provides a new insight to the topological manipulation of matters by utilizing CDWs' flexible characters to external stimuli.