论文标题
在厚Bi $ _2 $ se $ _3 $单晶的拓扑表面状态的耦合耦合
Coupling-decoupling of conducting topological surface states in thick Bi$_2$Se$_3$ single crystals
论文作者
论文摘要
使用互助的敏感AC易感性测量，BI $ _2 $ SE $ _3 $单晶，使用共同的两个线圈电感技术（参考文献32）显示了高导电表面状态的耦合和解耦。表面状态的耦合存在于70微米的厚度，该厚度比在薄膜中发现的约5至10纳米的直接耦合极限大得多。高传导拓扑表面状态通过硒空位产生的高电导通道通过晶体耦合。这些通过大块的传导通道超过70微米的厚度和高温，从而导致拓扑表面状态的脱钩。我们显示拓扑绝缘体中的脱钩表面状态持续到室温。使用电阻器（R）电感器（L）模型对Ti的AC敏感性响应的Nyquist图的分析显示，在这些BI $ _2 $ _2 $ SE $ _3 $ crystals中发现的表面状态之间的耦合的电感性质。
Sensitive ac susceptibility measurements of a topological insulator, Bi$_2$Se$_3$ single crystal, using mutual two coil inductance technique (Ref. 32) shows coupling and decoupling of high conducting surface states. The coupling of the surface states exists upto thickness of 70 microns, which is much larger than the direct coupling limit of thickness approximately 5 to 10 nanometers found in thin films. The high conducting topological surface states are coupled through the crystal via high electrically conducting channels, generated by Selenium vacancies. These conducting channels through the bulk disintegrate beyond 70 micron thickness and at high temperatures, thereby leading to decoupling of the topological surface states. We show the decoupled surface states persist upto room temperature in the topological insulator. Analysis of Nyquist plot of ac-susceptibility response of the TI using a resistor (R) Inductor (L) model shows an inductive nature of the coupling between surface states found in these Bi$_2$Se$_3$ crystals.
