论文标题
EV级电子回路工艺的硅的电离产量
Ionization Yield in Silicon for eV-Scale Electron-Recoil Processes
论文作者
论文摘要
宏观硅检测器的单电荷解析的发展为O（ev）尺度上的稀有过程打开了一个窗口。为了重建给定事件的能量，或模拟对探测器中电子吸收的给定能量获得的电荷信号，需要一个准确的电荷收率模型。在本文中，我们回顾了硅的现有电荷产量测量值，尤其是在1 KEV以下的区域。我们强调了12-50 eV（称为“ UV-GAP”）之间的校准差距，并采用了影响电离的现象学模型，以探索这种能量状态中可能的电荷产量。最后，我们探讨了该模型中的变化对测试案例的影响，即对电子散射的测试案例，以说明不确定性收费产量的科学影响。
The development of single charge resolving, macroscopic silicon detectors has opened a window into rare processes at the O(eV) scale. In order to reconstruct the energy of a given event, or model the charge signal obtained for a given amount of energy absorbed by the electrons in a detector, an accurate charge yield model is needed. In this paper we review existing measurements of charge yield in Silicon, focusing in particular on the region below 1 keV. We highlight a calibration gap between 12-50 eV (referred to as the "UV-gap") and employ a phenomenological model of impact ionization to explore the likely charge yield in this energy regime. Finally, we explore the impact of variations in this model on a test case, that of dark matter scattering off electrons, to illustrate the scientific impact of uncertainties in charge yield.
