论文标题
使用UV-Nanoimprint光刻和Bosch Deep Reactive Ion Etching朝向高吞吐量大面积金属制造
Towards High Throughput Large Area Metalens Fabrication using UV-Nanoimprint lithography and Bosch Deep Reactive Ion Etching
论文作者
论文摘要
我们通过使用标准工业高吞吐量硅处理技术来证明衍射限制的介电介质交层镜片，用于NIR：UV Nano Indrint石刻石印象（UV-NIL）与连续的反应离子蚀刻（RIE）和脉冲性Bosch Deepere bosch Deeperaight Reactive Ion die（Drie）相结合。随着元信息的研究领域向应用移动，这些技术与使用电子束光刻的常用成本密集型制造方法的潜在替代相关。我们表明，可以在元横面设计中补偿由Bosch Drie工艺产生的垫板式侧面粗糙度，而不会降低镜头质量。特别关注制造挑战，必须克服与商业应用相关的高吞吐量产生。在波长λ= 1.55 $ m $ m和λ= 1.31 $ $ m的波长下，镜头效率分别为30％和17％。提出了许多与遇到挑战有关的过程优化的路线。
We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by use of standard industrial high throughput silicon processing techniques: UV Nano Imprint Lithography (UV-NIL) combined with continuous Reactive Ion Etching (RIE) and pulsed Bosch Deep Reactive Ion Etching (DRIE). As the research field of metasurfaces moves towards applications these techniques are relevant as potential replacements of commonly used cost-intensive fabrication methods utilizing Electron Beam Lithography. We show that washboard-type sidewall surface roughness arising from the Bosch DRIE process can be compensated for in the design of the metasurface, without deteriorating lens quality. Particular attention is given to fabrication challenges that must be overcome towards high throughput production of relevance to commercial applications. Lens efficiencies are measured to be 30% and 17% at wavelengths λ = 1.55$μ$m and λ = 1.31$μ$m, respectively. A number of routes towards process optimization are proposed in relation to encountered challenges.
