论文标题
Majorana绑定状态和超导体/半导体纳米线设备中的零偏置电导峰值
Majorana bound states and zero-bias conductance peaks in superconductor/semiconductor nanowire devices
论文作者
论文摘要
理论研究表明，Majorana结合状态在纳米线的末端的出现。例如，在超导体/半导体纳米线设备中，已经执行了该概念的实验验证，其中超导间隙，自旋轨道耦合和外部磁场之间的相互作用允许创建零能源绑定的状态。最近的实验通过局部修改有效的化学潜力提出了拓扑相图。我们使用半无限S/N连接形式的实验系统模型讨论了这种可能性。在同质系统的情况下以及栅极电压的情况下，我们计算了零偏置差分电导$ g $。调查了电导与系统中有效差距之间的关系。我们表明，$ g $可以在磁场与参数的门电压空间中重现拓扑相图。
Theoretical research suggests a emergence of the Majorana bound states at the ends of the nanowires. Experimental verifications of said concept has already been executed, e.g., in superconductor/semiconductor nanowire devices where interplay between superconducting gap, spin-orbit coupling and external magnetic field allows for creation of zero-energy bound states. Recent experiments propose a topological phase diagram by local modification of the effective chemical potential. We discuss this possibility, using a model of experimental system in form of semi-infinite S/N junction. We calculate the zero--bias differential conductance $G$ in the case of the homogeneous system, as well as in the presence of the gate voltage. Relation between conductance and the effective gap in the system is investigated. We show that $G$ can reproduce the topological phase diagram in magnetic field vs. gate voltage space of parameters.
