论文标题
替代金属薄膜的温度依赖性电阻率
Temperature-Dependent Resistivity of Alternative Metal Thin Films
论文作者
论文摘要
已经研究了Cu，Ru，Co，ir和W薄膜电阻率（TCR）的温度系数，这是膜厚度低于10 nm的函数。 RU，CO和IR显示出散装的TCR值，它们与厚度相当独立，而CU的TCR随着厚度的减小而大大增加。薄W膜显示出负TCR值，可以与高混乱有关。结果在质量上与依赖温度的半经典薄膜电阻率模型一致，该模型考虑了声子，表面和晶界散射。
The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the thickness whereas the TCR of Cu increases strongly with decreasing thickness. Thin W films show negative TCR values, which can be linked to high disorder. The results are qualitatively consistent with a temperature-dependent semiclassical thin film resistivity model that takes into account phonon, surface, and grain boundary scattering.
