论文标题
高度可调的极化工程二维电子气体$ε$ -ALGAO3 / $ε$ -GA2O3异质结构
Highly tunable polarization-engineered two-dimensional electron gas in $ε$-AlGaO3 / $ε$-Ga2O3 heterostructures
论文作者
论文摘要
我们报告了$ε$ -ALGAO3 / $ aalgao3 / $ algao3 / $ ga2O3异源面和自发极化（PSP）逆转对2DEG密度在$ $ -GA2O3 / $ -GA2O3 / $ -ALGA $ -GA-GA-GA-GAER上的建模，以及自发极化（PSP）反向密度对2DEG密度的效果（PSP）逆转的影响。密度功能理论（DFT）用于计算$ε$ -GA2O3和$ε$ -ALGAO3合金的材料特性。使用Schrodinger-Poisson求解器以及DFT计算的参数，将2DEG密度计算为屏障类型和厚度的函数。通过优化$ε$ -GA2O3/$ε$ -ALGAO3/$ε$ -GA2O3异质结构的层厚度，获得了超过1600的电荷对比度。这项计算研究表明，基于$ε$ -GA2O3的异质结构设备的高潜力，用于非易失性记忆和神经形态应用。
We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$-AlGaO3 / $ε$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in $ε$-Ga2O3 /$ε$-AlGaO3 / $ε$-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of $ε$-Ga2O3 and $ε$-AlGaO3 alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of $ε$-Ga2O3/$ε$-AlGaO3/$ε$-Ga2O3 heterostructures, charge contrast ratios exceeding 1600 are obtained. This computational study indicates the high potential for $ε$-Ga2O3-based heterostructure devices for non-volatile memories and neuromorphic applications.
