论文标题

非磁带绝缘子中的氧空位诱导的拓扑厅效应

Oxygen Vacancy-Induced Topological Hall effect in a Nonmagnetic Band Insulator

论文作者

Ojha, Shashank Kumar, Gogoi, Sanat Kumar, Patidar, Manju Mishra, Patel, Ranjan Kumar, Mandal, Prithwijit, Kumar, Siddharth, Venkatesh, R., Ganesan, V., Jain, Manish, Middey, Srimanta

论文摘要

近来,Skyrmions的发现引发了人们对拓扑非平凡的旋转纹理的极大兴趣。可以将磁矩的非电流性质的特征视为电测量中的拓扑厅效应(The)。在新材料中,通过新材料实现这种非平凡的旋转纹理,这是一项持续的努力,因为它们具有未来的超密集的低功率记忆应用的巨大潜力。在这项工作中,我们报告说,氧气空位(OV)在5 $ d^0 $ system ktao $ _3 $中诱导了异常的大厅效应(AHE)。观察弱的抗钙化行为和在相同温度范围内的观察强烈意味着自旋轨道耦合(SOC)的至关重要的作用。从头算计算揭示了TA原子上OV和RashBA型传导电子纹理的磁矩的形成。在Rashba SoC的情况下,空位周围的本地矩可以形成结合的磁性极性(BMP),并具有非共线自旋纹理,从而形成。在当前情况下,横向和纵向电阻之间的缩放分析确立了偏斜散射驱动的AHE。我们的研究开辟了一条通过缺陷工程实现拓扑现象的途径。

The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measurement. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for future ultra-dense low-power memory applications. In this work, we report oxygen vacancy (OV) induced THE and anomalous Hall effect (AHE) in a 5$d^0$ system KTaO$_3$. The observation of weak antilocalization behavior and THE in the same temperature range strongly implies the crucial role of spin-orbit coupling (SOC) behind the origin of THE. Ab initio calculations reveal the formation of the magnetic moment on Ta atoms around the OV and Rashba-type spin texturing of conduction electrons. In the presence of Rashba SOC, the local moments around vacancy can form bound magnetic polarons (BMP) with noncollinear spin texture, resulting THE. Scaling analysis between transverse and longitudinal resistance establishes skew scattering driven AHE in present case. Our study opens a route to realize topological phenomena through defect engineering.

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