论文标题
苯掺杂硅的增强旋转大厅效应的光学可视化
Optical visualization of the enhanced spin Hall effect in bismuth doped silicon
论文作者
论文摘要
通过使用Helicity依赖性光电压（HDP）测量，可以实现由于在室温下（bi） - 掺杂硅（Si）中增强的自旋霍尔效应（SHE）引起的自旋积累的直接可视化。在将直流电流应用于双掺杂的SI下，在SI通道的边缘检测到了清晰的螺旋依赖性光伏电压，表明由于SHE导致垂直的自旋积累。相反，对于掺杂磷的Si，HDP信号忽略不计。与具有较大自旋霍尔角的铂通道相比，在Bi-Doped Si中获得了超过两个幅度的HDP信号。
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.
