论文标题

奇异的铁电拓扑缺陷中的准一维金属传导通道

Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects

论文作者

Yang, Wenda, Tian, Guo, Zhang, Yang, Xue, Fei, Zheng, Dongfeng, Zhang, Luyong, Wang, Yadong, Chen, Chao, Fan, Zhen, Hou, Zhipeng, Chen, Deyang, Gao, Jinwei, Zeng, Min, Qin, Minghui, Chen, Long-Qing, Gao, Xingsen, Liu, Jun-Ming

论文摘要

铁电拓扑对象(例如涡旋,天空)为探索新出现的物理特性提供了肥沃的地面,这些特性可能会在未来的可配置纳米电子设备中使用。在这里,我们演示了沿两种外来拓扑缺陷的准二维金属高传导通道,即(i)(i)象限涡流域结构的拓扑核心以及(ii)中心域(单极样)结构,限制在高质量的BifeO3 nanoisland阵列中,将其作为vortex corex corecelex corecelex corecelex corece corterex corecterex corecterex Corecece。我们通过相场模拟推出,沿着中心芯的超细(<3 nm)金属传导通道是由限制在核心处的筛选荷载载流子引起的,而涡旋芯的高电导率是由场诱导的扭曲状态引起的。 These conducting channels can be repeatedly and reversibly created and deleted by manipulating the two topological states via an electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices such as ultrahigh density nonvolatile memory.

Ferroelectric topological objects (e.g. vortices, skyrmions) provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future configurable nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels along two types of exotic topological defects, i.e. the topological cores of (i) a quadrant vortex domain structure and (ii) a center domain (monopole-like) structure confined in high quality BiFeO3 nanoisland array, abbreviated as the vortex core and the center core. We unveil via phase-field simulations that the superfine (< 3 nm) metallic conduction channels along center cores arise from the screening charge carriers confined at the core whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be repeatedly and reversibly created and deleted by manipulating the two topological states via an electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices such as ultrahigh density nonvolatile memory.

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