论文标题
负电容晶体管中的异常亚阈值行为
Anomalous Subthreshold Behaviors in Negative Capacitance Transistors
论文作者
论文摘要
对超薄体负电容场效应晶体管的最新测量表明，在经典MOSFET中没有预期的亚阈值行为。具体而言，发现在低到30 nm的多个栅极长度测量的设备中，亚阈值偏置的下阈值降低会减小。此外，相对于控制装置的子阈值摆动的改善显示出对栅极长度的非单调依赖性。在本文中，使用Landau-khanatnikov铁电堆栈模型，该模型用测量的电容 - 电压校准，我们表明，这两种异常行为均可用TCAD模拟定量再现。
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate bias in the subthreshold region for devices measured over multiple gate lengths down to 30 nm. In addition, improvement in the subthreshold swing relative to control devices showed a non-monotonic dependence on the gate length. In this paper, using a Landau-Khanatnikov ferroelectric gate stack model calibrated with measured Capacitance-Voltage, we show that both these anomalous behaviors can be quantitatively reproduced with TCAD simulations.
