论文标题
较弱的抗自定位与弱定位和电子电子相互作用之间的交叉跨界$ _2 $
Crossover Between Weak Antilocalization and Weak Localization and Electron-Electron Interaction in Few-Layer WTe$_2$
论文作者
论文摘要
我们在低温和高磁场上报告了封装的几层WTE $ _2 $中的电子传输研究。磁导频揭示了量子扩散状态中弱抗钙化（WAL）和弱定位（WL）之间温度引起的交叉。我们表明，交叉清楚地表明了几个特征长度之间的共存和竞争，包括脱落长度，自旋长度和平均自由路径。此外，低温电导会随着温度的升高表明电子 - 电子相互作用（EEI）和自旋轨道耦合（SOC）的相互作用而增加。我们证明了存在的存在并量化了EEI和SOC的优势，这些EEI和SOC被认为是在单层极限下在WTE2的量子旋转厅状态下缝隙开口的。
We report electron transport studies in an encapsulated few-layer WTe$_2$ at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization (WAL) and weak localization (WL) in quantum diffusive regime. We show that the crossover clearly manifests coexistence and competition among several characteristic lengths, including the dephasing length, the spin-flip length, and the mean free path. In addition, low temperature conductance increases logarithmically with the increase of temperature indicating an interplay of electron-electron interaction (EEI) and spin-orbit coupling (SOC). We demonstrate the existences and quantify the strengths of EEI and SOC which are considered to be responsible for gap opening in the quantum spin hall state in WTe2 at the monolayer limit.
