论文标题
硅积分光子旋转界面
A silicon-integrated telecom photon-spin interface
论文作者
论文摘要
长距离纠缠分布是量子技术的重要能力。实现此目标的一个出色的实用里程碑是识别合适的物质 - 光子界面,该界面同时具有长期连贯的寿命和有效的电信波段光学访问。在这项工作中,我们在其姐妹出版物的同时报告了T中心,T中心是一种硅缺陷,在电信O波段中,在1326 nm处具有自旋选择性的光学转变。在这里,我们表明,$^{28} $ SI的T中心分别提供电子和核自旋寿命,分别超过毫秒和第二,以及0.94(1)$μ$ S和Debye-Waller系数为0.23(1)的光学寿命。这项工作是朝着长寿命硅旋转,旋转式电信单光子发射器以及旋转依赖性硅的光子非线性之间相干光子互连的重要一步。
Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon defect with spin-selective optical transitions at 1326 nm in the telecommunications O-band. Here we show that the T center in $^{28}$Si offers electron and nuclear spin lifetimes beyond a millisecond and second respectively, as well as optical lifetimes of 0.94(1) $μ$s and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between long-lived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies.