论文标题
关于氧空位电气移民在铁电器的回忆响应中的关键作用
On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
论文作者
论文摘要
由于铁电备再次征材的潜在实现在数据存储和处理设备中，对铁电备忘录进行了深入的研究。在这项工作中，我们表明，金属/铁电氧化物/金属设备的回忆行为取决于两种效果的竞争：通过可切换的铁电偏振和氧气空位的电迁移，金属/铁电界面屏障的调节，而去极化领域在后面的角色中起着基本作用。我们使用包括效果的现象学模型来模拟我们的实验结果，我们再现了电响应的几个非平凡特征，包括外部旋转后观察到的电阻弛豫。除了洞悉这些复杂设备的基本物理外，我们的工作还表明，在单个铁电备忘录中可以将非挥发性和挥发性的电阻变化相结合，这一问题可能对神经形态设备的发展有用。
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen vacancies, with the depolarizing field playing a fundamental role in the latter. We simulate our experimental results with a phenomenological model that includes both effects and we reproduce several non-trivial features of the electrical response, including resistance relaxations observed after external poling. Besides providing insight into the underlying physics of these complex devices, our work suggests that it is possible to combine non-volatile and volatile resistive changes in single ferroelectric memristors, an issue that could be useful for the development of neuromorphic devices.
