论文标题
增强了Xenon1t多余的暗物质解释
Boosted Dark Matter Interpretation of the XENON1T Excess
论文作者
论文摘要
我们提出了增强的暗物质（BDM），以解释Xenon1t观察到的keV电子后坐力事件的过量。 BDM颗粒的速度比典型的病毒暗物质的速度大得多，因此，BDM电子散射自然可以产生KEV电子后坐力。我们表明，所需的BDM电子散射横截面可以在具有重型矢量介体的简单模型中轻松实现。尽管这些横截面太大，无法从太阳中逃脱，但BDM通量可以源自银河中心或晕黑物质歼灭。此外，将存在BDM信号的每日调制，不仅可以用来区分各种背景，而且还可以为BDM通量提供重要的方向信息。
We propose boosted dark matter (BDM) as a possible explanation for the excess of keV electron recoil events observed by XENON1T. BDM particles have velocities much larger than those typical of virialized dark matter, and, as such, BDM-electron scattering can naturally produce keV electron recoils. We show that the required BDM-electron scattering cross sections can be easily realized in a simple model with a heavy vector mediator. Though these cross sections are too large for BDM to escape from the Sun, the BDM flux can originate from the Galactic Center or from halo dark matter annihilations. Furthermore, a daily modulation of the BDM signal will be present, which could not only be used to differentiate it from various backgrounds, but would also provide important directional information for the BDM flux.
