论文标题
微型转移印刷高效GAAS光伏电池到硅上，用于无线功率应用
Micro-transfer printing high-efficiency GaAs photovoltaic cells onto silicon for wireless power applications
论文作者
论文摘要
在这里，我们报告了高效显微镜GAAS激光转换器的开发，并成功地将其转移到硅基板上，为可植入的电子设备，自动源系统和物联网应用提供了独特的，高功率，低成本和集成的电源解决方案。我们提出了300μm直径的单个结GAAS激光转换器，并使用PDMS邮票成功证明了这些设备向硅的传输，分别达到了48％和49％的光功率转换效率，分别在35和71 W/CM2 808 NM Laser Illumination下分别达到48％和49％。传输的设备涂有ITO覆盖以增加电流的扩散，并显示能够在141 W/cm2的照明强度（〜1400太阳）下处理非常高的短路电流密度，高达70 A/CM2，而其开路电压则超过了Transfer Devices of Photsecte of Photecters of Photos of Photos of Photece necy of Photece necy of Photos necy recy recy recy recy recy。这些光电源可以在无法选择有线功率的位置的传感器和系统中传递瓦特瓦，同时使用大量平行，可扩展和低成本制造方法来集成不同的材料和设备。
Here we report the development of high-efficiency microscale GaAs laser power converters, and their successful transfer printing onto silicon substrates, presenting a unique, high power, low-cost and integrated power supply solution for implantable electronics, autonomous systems and internet of things applications. We present 300 μm diameter single-junction GaAs laser power converters and successfully demonstrate the transfer printing of these devices to silicon using a PDMS stamp, achieving optical power conversion efficiencies of 48% and 49% under 35 and 71 W/cm2 808 nm laser illumination respectively. The transferred devices are coated with ITO to increase current spreading and are shown to be capable of handling very high short-circuit current densities up to 70 A/cm2 under 141 W/cm2 illumination intensity (~1400 Suns), while their open circuit voltage reaches 1235 mV, exceeding the values of pre-transfer devices indicating the presence of photon-recycling. These optical power sources could deliver Watts of power to sensors and systems in locations where wired power is not an option, while using a massively parallel, scalable, and low-cost fabrication method for the integration of dissimilar materials and devices.
