论文标题
Fet-LET混合动力6T SRAM的建议
Proposal of a FET-LET Hybrid 6T SRAM
论文作者
论文摘要
对于高性能缓存记忆，对高速，低功率，低泄漏和低噪声静态随机记忆（SRAM）的需求极高。 SRAM的能源效率在高性能和超功率便携式电池操作的电子系统中至关重要。在本文中，分析了带有6个FET的常规6T SRAM单元/阵列的所有速度和总能量消耗的因素，尤其是分析访问型载体的角色，以突出改进的需求和方向。提出了一个由光效应晶体管（LetS）代替的带有两个访问FET的混合动力6T SRAM，并提出了被光学波导（OWG）代替的电词线。分析了该混合动力SRAM，以揭示其在开关速度的影响方面的潜力，从而在常规6T SRAM上进行总能量浓度。对64 kb的原型混合SRAM阵列的数值分析分别显示了读取延迟和读取能量消耗7和34倍。当访问FET被LETS取代时，分别在写入延迟和写入能量浓度的书写延迟和4和6中。由于这种杂种结构和在那里的应用程序的应用，对周围的潜在影响并协助CIR插图。
There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high performance and ultralow-power portable, battery operated electronic systems. In this article the factors affecting the over-all speed and total energy consumption of a conventional 6T SRAM cell/array with 6 FETs, particularly roles of access tran-sistors are analyzed to highlight the needs and directions for improvement. A hybrid 6T SRAM with two access FETs being replaced by light-effect transistors (LETs) and the electrical word lines replaced by optical waveguides (OWGs) is proposed. This hybrid SRAM is analyzed to reveal its potential in im-provement of the switching speed and thus total energy con-sumption over the conventional 6T SRAM. Numerical analyses of a prototype hybrid SRAM array of 64 KB show a factor of 7 and 34 reduction in read delay and read energy consumption, respectively; and 4 and 6 in write delay and write energy con-sumption, respectively, when the access FETs are replaced by LETs. The potential impacts on the peripheral and assist cir-cuits due to this hybrid structure and application of the LETs there are also briefly discussed.
