论文标题
用于高分辨率电子光谱的硅漂移检测器的表征
Characterization of a Silicon Drift Detector for High-Resolution Electron Spectroscopy
论文作者
论文摘要
在这里考虑了电子检测，硅漂移检测器在高分辨率和高速X射线应用中被广泛使用。 Tritium beta衰减的准确测量是Tristan的核心（对无菌至主动中微子混合）项目的核心。这项工作介绍了单像素SDD检测器的表征，并从扫描电子显微镜获得的单能电子束。证明了SDD检测电子的适用性，在从少数keV到数十KV的能量范围内。实验测量结果揭示了检测器的入口窗口结构对观察到的能量响应的强烈影响。因此，需要详细的检测器模型来重建未知的β-末日源的光谱。
Silicon Drift Detectors, widely employed in high-resolution and high-rate X-ray applications, are considered here with interest also for electron detection. The accurate measurement of the tritium beta decay is the core of the TRISTAN (TRitium Investigation on STerile to Active Neutrino mixing) project. This work presents the characterization of a single-pixel SDD detector with a mono-energetic electron beam obtained from a Scanning Electron Microscope. The suitability of the SDD to detect electrons, in the energy range spanning from few keV to tens of keV, is demonstrated. Experimental measurements reveal a strong effect of the detector's entrance window structure on the observed energy response. A detailed detector model is therefore necessary to reconstruct the spectrum of an unknown beta-decay source.
