论文标题
拓扑绝缘子中稀磁的效果
Effect of dilute magnetism in a topological insulator
论文作者
论文摘要
三维拓扑绝缘子（TIS）已成为量子物质的独特状态，并在凝结物理学中产生了巨大的兴趣。三维（3D）Ti的表面由无质量的狄拉克锥组成，其特征在于Z2拓扑不变。在Ti表面引入磁性对于实现量子异常效应（QAHE）和其他新型磁电势现象至关重要。在这里，通过结合第一原理计算，磁传输，角度分辨光发射光谱（ARPES）和时间解析的ARPE（TR-ARPES），我们研究了Gadolinium（GD）掺杂SB2TE3的电子特性。我们的研究表明，GD掺杂的SB2TE3是一种自旋轨道诱导的散装带隙材料，其表面的特征是单个拓扑表面状态。我们进一步证明，通过GD掺杂将稀释后的4F电子磁性引入SB2TE3拓扑绝缘体系统，在该系统中产生了表面磁性。我们的结果提供了一个新的平台，以研究掺杂拓扑材料中稀磁和拓扑之间的相互作用。
Three-dimensional topological insulators (TIs) have emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a three dimensional (3D) TI are composed of a massless Dirac cone, which is characterized by the Z2 topological invariant. Introduction of magnetism on the surface of TI is essential to realize the quantum anomalous Hall effect (QAHE) and other novel magneto-electric phenomena. Here, by using a combination of first principles calculations, magneto-transport, angle-resolved photoemission spectroscopy (ARPES), and time resolved ARPES (tr-ARPES), we study the electronic properties of Gadolinium (Gd) doped Sb2Te3. Our study shows that Gd doped Sb2Te3 is a spin-orbit-induced bulk band-gap material, whose surface is characterized by a single topological surface state. We further demonstrate that introducing diluted 4f-electron magnetism into the Sb2Te3 topological insulator system by the Gd doping creates surface magnetism in this system. Our results provide a new platform to investigate the interaction between dilute magnetism and topology in doped topological materials.
