论文标题
薄膜生长对熵稳定氧化物中电导率的影响
Thin Film Growth Effects on Electrical Conductivity in Entropy Stabilized Oxides
论文作者
论文摘要
作为设计新材料的新方法，熵稳定已引起了人们的重大关注。该领域的大部分工作都集中在批量陶瓷加工上，使熵稳定的薄膜相对不受欢迎。随后对多晶（毫克{0.2} $ co $ _ {0.2} $ ni $ _ {0.2} $ _ {0.2} $ cu $ _ {0.2} $ _ {0.2} $ zn $ _ {0.2} $ _ {0.2} $ _ {0.2} $ _ {0.2} $ _在胶片纹理和晶格参数上。进一步的分析表明，在较低温度和较低的氧气压力下沉积的膜比在较高温度和压力下生长的相同膜高40倍。假设该电子电导率是由过渡金属价变化介导的极化子跳的结果，该变化补偿了氧气外氧计量计。
Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leaving entropy-stabilized thin films relatively underexplored. Following an extensive multi-variable investigation of polycrystalline (Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)O thin films deposited via pulsed laser deposition (PLD), it is shown here that substrate temperature and deposition pressure have strong and repeatable effects on film texture and lattice parameter. Further analysis shows that films deposited at lower temperatures and under lower oxygen chamber pressure are $\sim$40x more electrically conductive than otherwise identical films grown at higher temperature and pressure. This electronic conductivity is hypothesized to be the result of polaron hopping mediated by transition metal valence changes which compensate for oxygen off-stoichiometry.
