论文标题
极化独立的基态光学转变在紧密堆叠的INAS/GAAS柱状点中
Polarization Independent Ground State Optical Transitions in Closely Stacked InAs/GaAs Columnar Quantum Dots
论文作者
论文摘要
这项工作通过执行数百万个原子的紧密结合模拟，对INAS/GAAS柱量点（QD）的电子和光学性质进行了分析。通过在1550 nm的发射/吸收波长下，通过在柱状QD中工程数量，在1550 nm的发射/吸收波长下，在1550 nm的发射/吸收波长下可以实现极化程度的极化程度的近极度。这些结果对于需要极化不敏感的光学响应（例如半导体光放大器）的光学设备的设计是有希望的。
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical transition strengths predict that a nearly zero degree of polarisation can be achieved at 1550 nm emission/absorption wavelength by engineering the number of QD layers in a columnar QD. These results are promising for the design of optical devices requiring polarisation insensitive optical response such as semiconductor optical amplifiers.
