论文标题
明亮的高纯度量子发射器中的氮化铝整合光子学
Bright high-purity quantum emitters in aluminium nitride integrated photonics
论文作者
论文摘要
固态量子发射器（QE）是基于光子的量子信息处理的基础。在III氮化物半导体中开发高质量的QE的兴趣很大，因为它们由光电，高压晶体管和微波炉放大器中的大型和不断增长的应用驱动。在这里，我们报告了基于氮化铝的光子集成电路平台中QE的生成和直接集成。对于单个波导集成的QE，我们测量的片外计数率超过$ 6 \ times 10^{4} $计数每秒（CPS）（饱和率> $ 8.6 \ times 10^{4} $ CPS）。在不公平的薄膜样本中，我们用$ g^{（2）}（2）}（0）\ sim 0.05 $和光子计数率超过$ 8 \ times 10^{5} $ CPS（饱和率> $ 1 \ times 10^{6} $ CPS）。尽管将旋转和详细的光学线宽测量值留在将来的工作中，但这些结果已经表明了高质量的QE的潜力，该QE可以单层整合到广泛的III氮化器设备技术中，这些技术将启用新的量子设备机会和工业可伸缩性。
Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, we report the generation and direct integration of QEs in an aluminium nitride-based photonic integrated circuit platform. For individual waveguide-integrated QEs, we measure an off-chip count rate exceeding $6 \times 10^{4}$ counts per second (cps) (saturation rate > $8.6 \times 10^{4}$ cps). In an unpatterned thin-film sample, we measure antibunching with $g^{(2)}(0) \sim 0.05$ and photon count rates exceeding $8 \times 10^{5}$ cps (saturation rate > $1 \times 10^{6}$ cps). Although spin and detailed optical linewidth measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.
